Image: Rtd seq v3

Description: A working mechanism of a Resonant Tunneling Diode device and negative differential resistance in output characteristic. Notice the negative resistance characteristic after the first current peak due to reduction of first energy level below source fermi level with gate bias.
Title: Rtd seq v3
Credit: Tool:Resonant Tunneling Diode Simulation with NEGF simulator on www.nanoHUB.org. Link: http://nanohub.org/resources/8799
Author: Saumitra R Mehrotra & Gerhard Klimeck
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