Image: Illustration of C-V measurement

Description: C-V measurements can reveal oxide thickness, oxide charges, contamination from mobile ions, and interface trap density in wafer processes. In this image the C-V profile for a bulk p-type substrate MOSCAP with different oxide thickness is shown. The blue curve shown refers to a high frequency C-V profile while the red curve refers to low frequency C-V profile. MOS capacitance is independent of all the frequencies in the accumulation and depletion region. This is because it is here that the total charge is governed by majority carriers. In the inversion region the charge is governed by minority carriers, which forms the inversion layer. Due to finite minority carrier generation time, total charge is not able to follow the gate bias at higher frequencies, which can lead to differences in C-V profiles. Also worth noting here is the shift in threshold voltage with different oxide thickness.
Title: Illustration of C-V measurement
Credit: Image:https://nanohub.org/resources/8818 ; Tool link: http://nanohub.org/resources/451
Author: Saumitra R Mehrotra & Gerhard Klimeck
Permission:   This work is free and may be used by anyone for any purpose. If you wish to use this content, you do not need to request permission as long as you follow any licensing requirements mentioned on this page. Wikimedia has received an e-mail confirming that the copyright holder has approved publication under the terms mentioned on this page. This correspondence has been reviewed by an OTRS member and stored in our permission archive. The correspondence is available to trusted volunteers as ticket #2011041110017773. If you have questions about the archived correspondence, please use the OTRS noticeboard. Ticket link: https://ticket.wikimedia.org/otrs/index.pl?Action=AgentTicketZoom&TicketNumber=2011041110017773
Usage Terms: Creative Commons Attribution 3.0
License: CC BY 3.0
License Link: http://creativecommons.org/licenses/by/3.0
Attribution Required?: Yes